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dc.contributor.authorYoung, TFen_US
dc.contributor.authorHuang, IWen_US
dc.contributor.authorYang, YLen_US
dc.contributor.authorKuo, WCen_US
dc.contributor.authorJiang, IMen_US
dc.contributor.authorChang, TCen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2014-12-08T15:02:29Z-
dc.date.available2014-12-08T15:02:29Z-
dc.date.issued1996-08-01en_US
dc.identifier.issn0169-4332en_US
dc.identifier.urihttp://dx.doi.org/10.1016/0169-4332(96)00087-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/1146-
dc.description.abstractWe study the surface structure of porous silicon (PS) using atomic force microscopy (AFM), before and after oxidation in a HNO3 solution. The AFM image shows the PS surface with a self-affine random fractal structure of wires, hillocks and voids in various scales. After oxidization the wires and hillocks of PS structures are glazed with oxide and the voids are filled, PS structure is altered to a simple self-affine fractal structure of hillock clusters. The fractal dimension D of PS is around 2.3, which decreases with increasing oxidization to about 2.0 of a smooth surface for the saturated oxidization. Our direct observation of the fractal structure of PS from AFM data reveals a good explanation for the recently found novel nonlinear de-response in Ag thin films deposited on PS. We find the fractal surface structure of oxidized PS responds to the stepwise avalanche electric breakdown of the resistivity of Ag thin films deposited on oxidized PS.en_US
dc.language.isoen_USen_US
dc.titleAtomic force microscopy study on the surface structure of oxidized porous siliconen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/0169-4332(96)00087-6en_US
dc.identifier.journalAPPLIED SURFACE SCIENCEen_US
dc.citation.volume102en_US
dc.citation.issueen_US
dc.citation.spage404en_US
dc.citation.epage407en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1996VJ86100082-
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