標題: Atomic force microscopy study on the surface structure of oxidized porous silicon
作者: Young, TF
Huang, IW
Yang, YL
Kuo, WC
Jiang, IM
Chang, TC
Chang, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Aug-1996
摘要: We study the surface structure of porous silicon (PS) using atomic force microscopy (AFM), before and after oxidation in a HNO3 solution. The AFM image shows the PS surface with a self-affine random fractal structure of wires, hillocks and voids in various scales. After oxidization the wires and hillocks of PS structures are glazed with oxide and the voids are filled, PS structure is altered to a simple self-affine fractal structure of hillock clusters. The fractal dimension D of PS is around 2.3, which decreases with increasing oxidization to about 2.0 of a smooth surface for the saturated oxidization. Our direct observation of the fractal structure of PS from AFM data reveals a good explanation for the recently found novel nonlinear de-response in Ag thin films deposited on PS. We find the fractal surface structure of oxidized PS responds to the stepwise avalanche electric breakdown of the resistivity of Ag thin films deposited on oxidized PS.
URI: http://dx.doi.org/10.1016/0169-4332(96)00087-6
http://hdl.handle.net/11536/1146
ISSN: 0169-4332
DOI: 10.1016/0169-4332(96)00087-6
期刊: APPLIED SURFACE SCIENCE
Volume: 102
Issue: 
起始頁: 404
結束頁: 407
Appears in Collections:Conferences Paper


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  1. A1996VJ86100082.pdf