標題: Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density
作者: Wang, Te-Chung
Lu, Tien-Chang
Ko, Tsung-Shine
Kuo, Hao-Chung
Yu, Min
Wang, Sing-Chung
Chuo, Chang-Cheng
Lee, Zheng-Hong
Chen, Hou-Guang
光電工程學系
Department of Photonics
公開日期: 18-Dec-2006
摘要: The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on trenched a-plane GaN buffer layers. Not only the threading dislocation density but also the difference of anisotropic in-plane strain between orthogonal crystal axes can be mitigated by using trenched epitaxial lateral overgrowth (TELOG). The low threading dislocation density investigated by the cross-sectional transmission electron microscopy was estimated to be 3x10(7) cm(-2) on the N-face GaN wing. On the other hand, the Ga-face GaN wing with a faster lateral overgrowth rate could be influenced by the thin GaN layer grown on the bottom of the trenches, resulting in higher dislocation density generated. As a result, the authors concluded that a narrower stripped GaN seeds and deeper stripped trenches etched into the surface of sapphire could derive a better quality a-plane GaN film. Finally, they demonstrated the fast coalescence process of TELOG GaN films below 10 mu m thick. (c) 2006 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2405880
http://hdl.handle.net/11536/11432
ISSN: 0003-6951
DOI: 10.1063/1.2405880
期刊: APPLIED PHYSICS LETTERS
Volume: 89
Issue: 25
結束頁: 
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