標題: Sol-gel-derived double-layered nanocrystal memory
作者: Ko, Fu-Hsiang
You, Hsin-Chiang
Lei, Tan-Fu
材料科學與工程學系奈米科技碩博班
電子工程學系及電子研究所
Graduate Program of Nanotechnology , Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 18-Dec-2006
摘要: The authors have used the sol-gel spin-coating method to fabricate a coexisting hafnium silicate and zirconium silicate double-layered nanocrystal (NC) memories. From transmission electron microscopic and x-ray photoelectron spectroscopic analyses, the authors determined that the hafnium silicate and zirconium silicate NCs formed after annealing at 900 degrees C for 1 min. When using channel hot electron injection for charging and band-to-band tunneling-induced hot hole injection for discharging, the NC memories exhibited superior V-th shifting because of the higher probability for trapping the charge carrier. (c) 2006 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2416248
http://hdl.handle.net/11536/11431
ISSN: 0003-6951
DOI: 10.1063/1.2416248
期刊: APPLIED PHYSICS LETTERS
Volume: 89
Issue: 25
結束頁: 
Appears in Collections:Articles


Files in This Item:

  1. 000243415200052.pdf