標題: Intriguing conducting properties of HfOxNy thin films prepared from the Hf[N(C2H5)(2)](4)
作者: Chou, Yi-Hsuan
Chiu, Hsin-Tien
Kuo, Teng-Fang
Chi, Cheng-Chung
Chuang, Shiow-Huey
應用化學系
Department of Applied Chemistry
公開日期: 18-Dec-2006
摘要: Hafnium nitride films were prepared on the Si(100) substrates by the metal-organic chemical vapor deposition method using Hf[N(C2H5)(2)](4). The prepared samples were then oxidized in air, followed by rapid-thermal annealing to produce HfOxNy thin films, meanwhile the associated physical properties were investigated. The x-ray photoelectron spectroscope analysis unveiled that the composition of the films is HfOxNy. In addition, the films after the rapid-thermal annealing treatments at various temperatures revealed salient features in their physical properties, such as capacitance and conductivity. On this basis, the feasibility of using the HfOxNy layers as high-k dielectrics in complementary metal oxide semiconductor transistors was also discussed. (c) 2006 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2405848
http://hdl.handle.net/11536/11429
ISSN: 0003-6951
DOI: 10.1063/1.2405848
期刊: APPLIED PHYSICS LETTERS
Volume: 89
Issue: 25
結束頁: 
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