標題: Tunable slow light device using quantum dot semiconductor laser
作者: Peng, P. C.
Lin, C. T.
Kuo, H. C.
Tsai, W. K.
Liu, J. N.
Chi, S.
Wang, S. C.
Lin, G.
Yang, H. P.
Lin, K. F.
Chi, J. Y.
光電工程學系
Department of Photonics
公開日期: 25-Dec-2006
摘要: This investigation experimentally demonstrates a tunable slow light device using a quantum dot (QD) semiconductor laser. The QD semiconductor laser at 1.3 mu m fabricated on a GaAs substrate is grown by molecular beam epitaxy. Tunable slow light can be achieved by adjusting the bias current and wavelength detuning. The slow light device operated under probe signal from 5 to 10 GHz is presented. Moreover, we also demonstrate that the tunable slow light device can be used in a subcarrier multiplexed system. (C) 2006 Optical Society of America.
URI: http://dx.doi.org/10.1364/OE.14.012880
http://hdl.handle.net/11536/11425
ISSN: 1094-4087
DOI: 10.1364/OE.14.012880
期刊: OPTICS EXPRESS
Volume: 14
Issue: 26
起始頁: 12880
結束頁: 12886
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