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dc.contributor.authorLiu, W. -R.en_US
dc.contributor.authorHsieh, W. F.en_US
dc.contributor.authorHsu, C. -H.en_US
dc.contributor.authorLiang, K. S.en_US
dc.contributor.authorChien, F. S. -S.en_US
dc.date.accessioned2014-12-08T15:15:11Z-
dc.date.available2014-12-08T15:15:11Z-
dc.date.issued2006-12-29en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2006.09.043en_US
dc.identifier.urihttp://hdl.handle.net/11536/11417-
dc.description.abstractThe structural and electrical properties of epitaxial ZnO films grown by pulsed-laser deposition on sapphire (0001) were investigated by high-resolution X-ray diffraction (XRD), atomic force microscopy (AFM), scanning capacitance microscopy (SCM), conductive atomic force microscopy (C-AFM), and transmission electron microscopy (TEM). The results of XRD and AFM revealed that the ZnO films have a columnar-grain structure consisting of epitaxial cores surrounded by annular boundaries. The core and boundary regions exhibited significantly different capacitive responses and field emission current. The results of TEM indicated that the annular boundaries have high-density edge threading dislocations. The shift of flatband voltage and the raise of potential barrier at the boundaries observed by SCM and C-AFM were attributed to the interface trap densities caused by the existence of high-density edge threading dislocations. (c) 2006 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectdefectsen_US
dc.subjectsurfacesen_US
dc.subjectlaser epitaxyen_US
dc.subjectoxidesen_US
dc.subjectsemiconducting II-VI materialsen_US
dc.titleInfluence of the threading dislocations on the electrical properties in epitaxial ZnO thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jcrysgro.2006.09.043en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.citation.volume297en_US
dc.citation.issue2en_US
dc.citation.spage294en_US
dc.citation.epage299en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000243812100006-
dc.citation.woscount16-
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