Title: Degradation behaviors of trigate nanowires poly-si TFTs with NH3 plasma passivation under hot-carrier stress
Authors: Wu, Yung-Chun
Chang, Ting-Chang
Liu, Po-Tsun
Feng, Li-Wei
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
Issue Date: 2007
Abstract: This work studies degradation behavior after hot-carrier stress of trigate polysilicon thin-film transistors (poly-Si TFTs) with nanowires. The NH3 plasma passivation effect is also studied on the electrical characteristics after hot-carrier stress. The reliability of poly-Si TFTs with NH3 plasma passivation outperforms that without such passivation, resulting from the effective hydrogen passivation of the grain-boundary dangling bonds, and the pileup of nitrogen at the SiO2/poly-Si interface. The reliability of poly-Si TFTs further improves by using nanowires structure. These findings originate from the fact that the nanowires poly-Si TFT has robust trigate control to reduce the hot-carrier effect due to declining lateral electrical field and its penetration from the drain, and its split nanowire structure has superior NH3 plasma passivation effect. In degradation results under dc and ac stress, it reveals that the NH3 plasma is mostly passivated on deep traps of grain boundaries rather than tail traps.
URI: http://hdl.handle.net/11536/11411
ISSN: 1099-0062
DOI: 10.1149/1.2746500
Volume: 10
Issue: 8
Begin Page: H235
End Page: H238
Appears in Collections:Articles