標題: Fabrication and characterization of InGaN-based green resonant-cavity LEDs using hydrogen ion-implantation techniques
作者: Huang, Shih-Yung
Horng, Ray-Hua
Kuo, Hao-Chung
Wuu, Dong-Sing
光電工程學系
Department of Photonics
公開日期: 2007
摘要: The InGaN-based green resonant-cavity light-emitting diodes (RCLEDs) have been fabricated using hydrogen ion-implantation and laser liftoff techniques. The RCLEDs structure consisted of an InGaN/GaN multiple-quantum-well active layer between the top (5 pairs) and bottom (7.5 pairs) dielectric TiO2/SiO2 distributed Bragg reflectors with optical reflectance of 85% and 99.9%, respectively. The insulation layers of the RCLEDs with and without H+ implantation were formed by the hydrogen ion-implantation layers of 1x10(14) ions/cm(2) concentration and SiO2 film, respectively. The corresponding forward turn-on voltage at 0.6 kA/cm(2) dc current density injection were about similar to 4.58 V and similar to 4.55 V for the RCLEDs with and without H+ implantation. The light output intensity of the RCLEDs with H+ implantation is higher by a factor of 1.4 as compared to that of the similar structure without H+ implantation at a current density of 0.6 kA/cm(2). The directionality of RCLEDs with H+ implantation is superior to that of RCLEDs without H+ implantation. (c) 2007 The Electrochemical Society.
URI: http://hdl.handle.net/11536/11407
http://dx.doi.org/10.1149/1.2778860
ISSN: 0013-4651
DOI: 10.1149/1.2778860
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 154
Issue: 11
起始頁: H962
結束頁: H966
顯示於類別:期刊論文


文件中的檔案:

  1. 000249787900074.pdf