標題: Nitrogen effects on the integrity of silicon dioxide grown on polycrystalline silicon
作者: Lai, Chao Sung
Kao, Chyuan Haur
Lee, Chung Len
Lei, Tan Fu
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2007
摘要: In this paper, we describe a simple technique to achieve a thin nitrided polyoxide film, only requiring an extra nitrogen implantation to be compatible with the floating gate nonvolatile memory process. The integrity of polyoxides is improved by using the through-silicon-gate nitrogen implantation. Nitridation can be achieved by implanting nitrogen into polysilicon gate followed by a high temperature annealing to drive the nitrogen atoms across the polysilicon, through the polyoxide, and to incorporate nitrogen at the polyoxide/polysilicon interface. The nitrogen-rich layer formed during the driven-in process not only strengthens the polyoxide structure but also improves the polyoxide quality. Improvements of electrical characteristics such as a low leakage current, a low electron trapping, and a high breakdown field for both positive and negative biases have been observed. (c) 2007 The Electrochemical Society.
URI: http://hdl.handle.net/11536/11406
http://dx.doi.org/10.1149/1.2767854
ISSN: 0013-4651
DOI: 10.1149/1.2767854
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 154
Issue: 10
起始頁: H883
結束頁: H886
顯示於類別:期刊論文


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