標題: Formation of germanium nanocrystals embedded in a silicon-oxygen-nitride layer
作者: Tu, Chun-Hao
Chang, Ting-Chang
Liu, Po-Tsun
Weng, Chi-Feng
Liu, Hsin-Chou
Chang, Li-Ting
Lee, Sheng-Kai
Chen, Wei-Ren
Sze, Simon M.
Chang, Chun-Yen
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
公開日期: 2007
摘要: The formation of germanium nanocrystals embedded in silicon-oxygen-nitride with distributed charge storage elements is proposed. A large memory window was observed due to isolated Ge nanocrystals in the SiON gate stack layer. The Ge nanocrystals were nucleated after a high-temperature oxidized SiGeN layer. The Ge nanocrystals embedded in the SiON stack layer exhibited nonvolatile memory characteristics with the obvious threshold voltage shift under a bidirectional voltage sweep. Also, the manufacturing technology using the sequent high-temperature oxidation of the a-Si layer and the direct oxidation of the SiGeN layer is proposed, respectively, for the formation of a blocking oxide layer to enhance the performance of nonvolatile memory devices. The reliability characteristics, including retention time and endurance, are also advisable for the application of nonvolatile memory device. (c) 2007 The Electrochemical Society.
URI: http://hdl.handle.net/11536/11405
http://dx.doi.org/10.1149/1.2717494
ISSN: 0013-4651
DOI: 10.1149/1.2717494
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 154
Issue: 6
起始頁: H435
結束頁: H439
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