標題: A new technique to extract oxide trap time constants in MOSFET's
作者: Wang, TH
Chang, TE
Chiang, LP
Huang, C
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-八月-1996
摘要: A new technique to determine oxide trap time Constants in a 0.6 mu m n-MOSFET subject to hot electron stress has been proposed, In this method, we used GIDL current as a direct monitor of the oxide charge detrapping-induced transient characteristics. An analytical model relating the GIDL current evolution to oxide trap time constants was derived, Our result shows that under a field-emission dominant oxide charge detrapping condition, V-gs = -4 V and V-ds = 3 V, the hot electron stress generated oxide traps exhibit two distinct time constants from seconds to several tens of seconds.
URI: http://dx.doi.org/10.1109/55.511587
http://hdl.handle.net/11536/1139
ISSN: 0741-3106
DOI: 10.1109/55.511587
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 17
Issue: 8
起始頁: 398
結束頁: 400
顯示於類別:期刊論文


文件中的檔案:

  1. A1996UZ85400005.pdf