標題: Periodically lateral silicon grains fabricated by excimer laser irradiation with a-Si spacers for LTPS TFTs
作者: Cheng, Huang-Chung
Tsai, Chun-Chien
Lu, Jian-Hao
Chen, Hsu-Hsin
Chen, Bo-Ting
Chang, Ting-Kuo
Lin, Ching-Wei
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2007
摘要: Low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) with a periodic lateral silicon grain structure have been demonstrated to exhibit high-performance electrical characteristics via the amorphous silicon spacers above the amorphous silicon film crystallized with excimer laser. Amorphous silicon spacers allowed the bottom of the under-layered amorphous silicon film to serve as seed crystals. The periodic grain structure could be artificially controlled via the super lateral growth phenomenon during excimer laser irradiation. Consequently, such periodically large and lateral grains in the TFTs would achieve high field-effect-mobility of 298 cm(2)/V s, as compared with the conventional ones of 128 cm(2)/V s. In addition, the uniformity of device-to-device could be improved due to this location-manipulated lateral silicon grains. (c) 2006 The Electrochemical Society.
URI: http://hdl.handle.net/11536/11341
http://dx.doi.org/10.1149/1.2382420
ISSN: 0013-4651
DOI: 10.1149/1.2382420
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 154
Issue: 1
起始頁: J5
結束頁: J10
顯示於類別:期刊論文


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  1. 000242538600073.pdf