標題: Two-bit lanthanum oxide trapping layer nonvolatile flash memory
作者: Lin, Yu-Hsien
Chien, Chao-Hsin
Yang, Tsung-Yuan
Lei, Tan-Fu
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2007
摘要: This paper describes the two-bit characteristics of SONOS-type memories prepared using lanthanum oxide, a high-k dielectric material, as the trapping layers. We used "channel hot-electron injection" for programming and "band-to-band hot-hole injection" for erasing to perform the memory operations. We observed large memory windows, a relatively high P/E speed, and good retention characteristics for these SONOS-type memories. It appears that La2O3 is an excellent candidate for use as the trapping layer in SONOS-type memories. (C) 2007 The Electrochemical Society.
URI: http://hdl.handle.net/11536/11336
http://dx.doi.org/10.1149/1.2737345
ISSN: 0013-4651
DOI: 10.1149/1.2737345
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 154
Issue: 7
起始頁: H619
結束頁: H622
顯示於類別:期刊論文


文件中的檔案:

  1. 000246892000063.pdf