標題: High-performance HfO2 gate dielectrics fluorinated by postdeposition CF4 plasma treatment
作者: Wu, Woei Cherng
Lai, Chao Sung
Wang, Jer Chyi
Chen, Jian Hao
Ma, Ming Wen
Chao, Tien Sheng
電子物理學系
Department of Electrophysics
公開日期: 2007
摘要: The superior characteristics of fluorinated HfO2 gate dielectrics were investigated. Fluorine was incorporated into HfO2 thin film by postdeposition CF4 plasma treatment to form fluorinated HfO2 gate dielectrics. Secondary-ion mass spectroscopy results showed that there was a significant incorporation of fluorine atoms at the TaN/HfO2 and HfO2/Si interface. Improvement of the gate leakage current, breakdown voltage, capacitance-voltage hysteresis, and charge trapping characteristics was observed in the fluorinated HfO2 gate dielectrics, with no increase of interfacial layer thickness. A physical model is presented to explain the improvement of hysteresis and the elimination of charge trapping. These results indicate that the fluorinated HfO2 gate dielectrics appear to be useful technology for future ultrathin gate dielectrics. (C) 2007 The Electrochemical Society.
URI: http://hdl.handle.net/11536/11333
http://dx.doi.org/10.1149/1.2733873
ISSN: 0013-4651
DOI: 10.1149/1.2733873
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 154
Issue: 7
起始頁: H561
結束頁: H565
顯示於類別:期刊論文


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