標題: A novel four-mask-step low-temperature polysilicon thin-film transistor with self-aligned raised source/drain (SARSD)
作者: Chang, Kow Ming
Lin, Gin Min
Chen, Cheng Guo
Hsieh, Mon Fan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: four masks;ON/OFF current ratio;polycrystalline-silicon thin-film transistor (poly-Si TFT);self-aligned raised source/drain (SARSD);thin channel
公開日期: 1-Jan-2007
摘要: In this letter, a novel structure of polycrystalline-silicon thin-film transistors (TFTs) with self-aligned raised source/drain (SARSD) and a thin channel has been developed and investigated. In the proposed structure, a thick SD and a thin active region could be achieved with only four mask steps, which are less than that in conventional raised SD TFTs. The proposed SARSD TFT has a higher ON-state current and a lower OFF-state leakage current. Moreover, the ON/OFF current ratio of the proposed SARSD TFT is also higher than that of a conventional coplanar TFT.
URI: http://dx.doi.org/10.1109/LED.2006.887933
http://hdl.handle.net/11536/11303
ISSN: 0741-3106
DOI: 10.1109/LED.2006.887933
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 28
Issue: 1
起始頁: 39
結束頁: 41
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