標題: Structure design criteria of dual-channel high mobility electron transistors
作者: Lin, Jia-Chuan
Chen, Yu-Chieh
Tsai, Wei-Chih
Yang, Po-Yu
光電工程學系
Department of Photonics
關鍵字: dual-channel;single-channel;delta-doping;HEMT;2DEG
公開日期: 1-Jan-2007
摘要: The design criteria of dual-channel high electron mobility transistor (DHEMT) are proposed in this study. 8-Doped In(0.52)Al(0.48)As/ In(0.53)Ga(0.47)As/InP material systems are concentrated in this article. The DHEMT structures are explored numerically and compared with conventional single-channel high electron mobility transistor (SHEMT) structures. Some criteria of doping concentration and layer structure design are proposed. The simulation results reveal that DHEMT has a larger voltage swing, a lower gate leakage current, a better carrier confinement, a higher density of two-dimensional electron gas (2DEG) and an excellent transconductance than SHENIT. (c) 2006 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.sse.2006.11.016
http://hdl.handle.net/11536/11270
ISSN: 0038-1101
DOI: 10.1016/j.sse.2006.11.016
期刊: SOLID-STATE ELECTRONICS
Volume: 51
Issue: 1
起始頁: 64
結束頁: 68
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