標題: Enhanced metalorganic chemical vapor deposition titanium nitride film fabricated using tetrakis-dimethylamino-titanium for barrier metal application in sub-half-micron technology
作者: Wang, CK
Liu, LM
Liao, M
Cheng, HC
Lin, MS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: MOCVD;TiN:C;TDMAT;N-2 plasma;W plug
公開日期: 1-八月-1996
摘要: Enhanced metalorganic chemical vapor deposition (MOCVD) titanium nitride (TiN:C) film with low resistivity (< 700 mu Omega . cm) has been fabricated by thermal decomposition of tetrakis-dimethylamino-titanium (TDMAT; Ti[N(CH3)(2)](4)) Enhancement is carried out by in-situ N-2 plasma treatment of as-deposited TiN:C film and the enhanced TiN:C film has good stability: less than 4% increase in film resistivity after exposure to air for 24 days. The amount of oxygen absorbed in this enhanced TiN:C film after air exposure, determined by Auger electron spectroscopy (AES) was significantly reduced. This enhanced MOCVD TiN:C film has been successfully applied to sub-half-micron devices. A void-tree tungsten plug (W plug) for sub-half-micron holes can be achieved. Good barrier performance and low contact/via resistance have also been demonstrated.
URI: http://hdl.handle.net/11536/1127
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 35
Issue: 8
起始頁: 4274
結束頁: 4279
顯示於類別:期刊論文


文件中的檔案:

  1. A1996VF45000018.pdf