標題: Performance enhancement of the nMOSFET low-noise amplifier by package strain
作者: Hua, W. -C.
Chang, H. -L.
Wang, T.
Lin, C. -Y
Lin, C. -P.
Lu, S. S.
Meng, C. C.
Liu, C. W.
電信工程研究所
Institute of Communications Engineering
關鍵字: biaxial strain;cutoff frequency;low-noise amplifier (LNA);noise factor;noise figure (NF);package strain;tensile transconductance.
公開日期: 1-Jan-2007
摘要: The package strain improves the noise figure (NF) of the low-noise amplifier (LNA). The maximum noise reduction is similar to 0.53 dB (13%) at the operating frequency of 2.4 GHz under the biaxial tensile strain of 0.037%. The NIT reduction of the strained LNA is mainly due to the enhanced transconductance and cutoff frequency of the individual nMOSFET device under the same strain and bias conditions.
URI: http://dx.doi.org/10.1109/TED.2006.887194
http://hdl.handle.net/11536/11267
ISSN: 0018-9383
DOI: 10.1109/TED.2006.887194
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 54
Issue: 1
起始頁: 160
結束頁: 162
Appears in Collections:Articles


Files in This Item:

  1. 000243280500022.pdf