|標題:||Performance enhancement of the nMOSFET low-noise amplifier by package strain|
|作者:||Hua, W. -C.|
Chang, H. -L.
Lin, C. -Y
Lin, C. -P.
Lu, S. S.
Meng, C. C.
Liu, C. W.
Institute of Communications Engineering
|關鍵字:||biaxial strain;cutoff frequency;low-noise amplifier (LNA);noise factor;noise figure (NF);package strain;tensile transconductance.|
|摘要:||The package strain improves the noise figure (NF) of the low-noise amplifier (LNA). The maximum noise reduction is similar to 0.53 dB (13%) at the operating frequency of 2.4 GHz under the biaxial tensile strain of 0.037%. The NIT reduction of the strained LNA is mainly due to the enhanced transconductance and cutoff frequency of the individual nMOSFET device under the same strain and bias conditions.|
|期刊:||IEEE TRANSACTIONS ON ELECTRON DEVICES|
|Appears in Collections:||Articles|
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