標題: InGaN/GaN nanostripe grown on pattern sapphire by metal organic chemical vapor deposition
作者: Ko, T. S.
Wang, T. C.
Gao, R. C.
Lee, Y. J.
Lu, T. C.
Kuo, H. C.
Wang, S. C.
Chen, H. G.
光電工程學系
Department of Photonics
公開日期: 1-Jan-2007
摘要: The authors have used metal organic chemical vapor deposition to grow InGaN/GaN multiple quantum well (MQW) nanostripes on trapezoidally patterned c-plane sapphire substrates. Transmission electron microscopy (TEM) images clearly revealed that the MQWs grew not only on the top faces of the trapezoids but also on both lateral side facets along the [0001] direction defined by the selected area electron diffraction pattern. Meanwhile, dislocations that stretched from the interfaces between the GaN and the substrates did not pass through the MQWs in the TEM observation. Microphotoluminescence measurements verified that the luminescence efficiency from a single nanostripe was enhanced by up to fivefold relative to those of regular thin film MQW structures. Observation of the cathodoluminescence identified the areas of light emission and confirmed that enhanced emission occurred from the nanostripes. (c) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2430487
http://hdl.handle.net/11536/11244
ISSN: 0003-6951
DOI: 10.1063/1.2430487
期刊: APPLIED PHYSICS LETTERS
Volume: 90
Issue: 1
結束頁: 
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