標題: Ultrathin Si capping layer suppresses charge trapping in HfOxNy/Ge metal-insulator-semiconductor capacitors
作者: Cheng, Chao-Ching
Chien, Chao-Hsin
Luo, Guang-Li
Yang, Chun-Hui
Kuo, Mei-Ling
Lin, Je-Hung
Chang, Chun-Yen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-一月-2007
摘要: In this study the authors investigated the Ge outdiffusion characteristics of HfOxNy/Ge metal-insulator-semiconductor capacitors to determine their charge trapping behavior. Capping the Ge substrate with an ultrathin Si layer inhibits the incorporation of Ge into the high-k bulk dielectric in the form of GeOx, thereby diminishing the resultant oxide charge trapping. The thermal stability of the entire capacitor structure was also improved after performing an additional Si passivation process. (c) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2430629
http://hdl.handle.net/11536/11242
ISSN: 0003-6951
DOI: 10.1063/1.2430629
期刊: APPLIED PHYSICS LETTERS
Volume: 90
Issue: 1
結束頁: 
顯示於類別:期刊論文


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  1. 000243379900073.pdf