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dc.contributor.authorWang, Jyh-Liangen_US
dc.contributor.authorLai, Yi-Shengen_US
dc.contributor.authorLee, Trent Gwo-Yannen_US
dc.contributor.authorChiou, Bi-Shiouen_US
dc.contributor.authorTsai, Chun-Chienen_US
dc.contributor.authorTseng, Huai-Yuanen_US
dc.contributor.authorJan, Chueh-Kueien_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.date.accessioned2014-12-08T15:14:57Z-
dc.date.available2014-12-08T15:14:57Z-
dc.date.issued2007-01-07en_US
dc.identifier.issn0022-3727en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0022-3727/40/1/023en_US
dc.identifier.urihttp://hdl.handle.net/11536/11237-
dc.description.abstractIn this study, pulsed- laser deposited ( Pb, Sr) TiO3 ( PSrT) films on p- type Si were studied at low substrate temperatures ranging from 300 to 450 degrees C for metal/ ferroelectric/ semiconductor applications. The substrate temperature strongly enhances film crystallinity without significant inter- diffusion at the PSrT/ Si interface and affects the electrical properties. As the substrate temperature increases, the films have smaller leakage currents, fewer trap states at the electrode interfaces, clockwise capacitance versus applied field hysteresis loops and larger memory windows correlated with superior crystallinity. Conversely, 300 degrees C- deposited films exhibit a small and counterclockwise loop with a positive shift of the flatband voltage, attributed to more negative trap charges within the films. However, the high substrate temperature ( 450 degrees C) may produce serious Pb - O volatilization, incurring more defects and leakage degradation. The analyses of fixed charge density and flatband voltage shift reveal the trap status and agree well with the leakage characteristic. An electron band model of the Pt/ PSrT/ Si electronic structure is proposed to explain the electrical behaviour. The excellent fatigue endurance with a small variation of memory windows (< 11%) after 1010 switching is also demonstrated.en_US
dc.language.isoen_USen_US
dc.titleCharacteristics of low-temperature pulse-laser-deposited (Pb,Sr)TiO3 films in metal/ferroelectric/silicon structureen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0022-3727/40/1/023en_US
dc.identifier.journalJOURNAL OF PHYSICS D-APPLIED PHYSICSen_US
dc.citation.volume40en_US
dc.citation.issue1en_US
dc.citation.spage254en_US
dc.citation.epage259en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000243150300041-
dc.citation.woscount1-
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