標題: Characteristics of low-temperature pulse-laser-deposited (Pb,Sr)TiO3 films in metal/ferroelectric/silicon structure
作者: Wang, Jyh-Liang
Lai, Yi-Sheng
Lee, Trent Gwo-Yann
Chiou, Bi-Shiou
Tsai, Chun-Chien
Tseng, Huai-Yuan
Jan, Chueh-Kuei
Cheng, Huang-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 7-Jan-2007
摘要: In this study, pulsed- laser deposited ( Pb, Sr) TiO3 ( PSrT) films on p- type Si were studied at low substrate temperatures ranging from 300 to 450 degrees C for metal/ ferroelectric/ semiconductor applications. The substrate temperature strongly enhances film crystallinity without significant inter- diffusion at the PSrT/ Si interface and affects the electrical properties. As the substrate temperature increases, the films have smaller leakage currents, fewer trap states at the electrode interfaces, clockwise capacitance versus applied field hysteresis loops and larger memory windows correlated with superior crystallinity. Conversely, 300 degrees C- deposited films exhibit a small and counterclockwise loop with a positive shift of the flatband voltage, attributed to more negative trap charges within the films. However, the high substrate temperature ( 450 degrees C) may produce serious Pb - O volatilization, incurring more defects and leakage degradation. The analyses of fixed charge density and flatband voltage shift reveal the trap status and agree well with the leakage characteristic. An electron band model of the Pt/ PSrT/ Si electronic structure is proposed to explain the electrical behaviour. The excellent fatigue endurance with a small variation of memory windows (< 11%) after 1010 switching is also demonstrated.
URI: http://dx.doi.org/10.1088/0022-3727/40/1/023
http://hdl.handle.net/11536/11237
ISSN: 0022-3727
DOI: 10.1088/0022-3727/40/1/023
期刊: JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume: 40
Issue: 1
起始頁: 254
結束頁: 259
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