標題: Effect of growth conditions on the Al composition and quality of AlGaN film
作者: Huang, G. S.
Yao, H. H.
Kuo, H. C.
Wang, S. C.
光電工程學系
Department of Photonics
關鍵字: MOVPE;AlGaN;Al composition
公開日期: 15-一月-2007
摘要: Effects of growth conditions on Al composition and quality of AlxGa1-xN epilayer grown by low-pressure matelorganic vapor phase epitaxy (MOVPE) have been investigated. The dependences of Al composition, growth rate and quality on the NH3 flow rate, TMAl flow rate and growth temperature were studied. The Al composition and quality of AlxGa1-xN film depend not only on the TMAl flow rate, but also on the NH3 flow rate and on the growth temperature. The Al composition of AlxGa1-xN film becomes saturated when the gas-phase composition TMAl/(TMAl + TMGa) increases to 0.4, while quality of AlxGa1-xN film becomes much worse. The Al composition of AlxGa1-xN film increases with increase in the NH3 flow rate. The quality of AlxGa1-xN epilayer is improved when the growth temperature increases. Possible Al incorporation mechanism is discussed. (c) 2006 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mseb.2006.08.064
http://hdl.handle.net/11536/11229
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2006.08.064
期刊: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
Volume: 136
Issue: 1
起始頁: 29
結束頁: 32
顯示於類別:期刊論文


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