標題: SPDT GaAs switches with copper metallized interconnects
作者: Wu, Y. C.
Chang, E. Y.
Lin, Y. C.
Hsu, H. T.
Chen, S. H.
Wei, W. C.
Chu, L. H.
Chang, C. Y.
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: copper metallization;GaAs psedomophic high-electron-mobility transistor (PHEMT);platinum;single-pole-double-throw (SPDT);switch
公開日期: 1-Feb-2007
摘要: Copper metallized AlGaAs/InGaAs psedomophic high-electron-mobility transistor (PHEMT) single-pole-double-throw (SPDT) switches utilizing platinum (Pt, 70 nm) as the diffusion barrier is reported for the first time. In comparison with the An metallized switches, the Cu metallized SPDT switches exhibited comparable performance with insertion loss of I Ss than 0.5 dB, isolation larger than 35 dB and the input power for one dB compression (input P-1 dB) of 27 dBm at 2.5 GHz. These switches were annealed at 250 degrees for 20 It for thermal stability test and showed no degradation of the dc characteristics after the annealing. Also, after 144 h of high temperature storage life (HTSL) environment test, these switches still remained excellent and reliable radio frequency (RF) characteristics. It is successfully demonstrated for the first time that the copper metallization using Pt as the diffusion barrier could be applied to the GaAs monolithic microwave integrated circuits switch fabrication with good RF performance and reliability.
URI: http://dx.doi.org/10.1109/LMWC.2006.890340
http://hdl.handle.net/11536/11182
ISSN: 1531-1309
DOI: 10.1109/LMWC.2006.890340
期刊: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume: 17
Issue: 2
起始頁: 133
結束頁: 135
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