標題: A novel dilute antimony channel In0.2Ga0.8AsSb/GaAs HEMT
作者: Su, Ke-Hua
Hsu, Wei-Chou
Lee, Ching-Sung
Wu, Tsung-Yeh
Wu, Yue-Han
Chang, Li
Hsiao, Ru-Shang
Chen, Jenn-Fang
Chi, Tung-Wei
材料科學與工程學系
電子物理學系
Department of Materials Science and Engineering
Department of Electrophysics
關鍵字: dilute channel;InGaAsSb/GaAs high-electron mobility transistor (HEMT);surfactant
公開日期: 1-二月-2007
摘要: This letter reports, for the first time, a high-electron mobility. transistor (HEMT) using A dilute antimony In0.2Ga0.8AsSb channel, which is grown by a molecular-beam epitaxy system. The interfacial quality within the InGaAsSb/GaAs quantum well of the HEMT device was effectively improved by introducing the surfactantlike Sb atoms during the growth of the InGaAs layer. The improved heterostructural quality and electron transport properties have also been verified by various surface characterization techniques. In comparison, the proposed HEMT with (without) the incorporation of Sb atoms has demonstrated the maximum extrinsic transconductance g(m,max) of 227 (180) mS/mm, a drain saturation current density I-DSS of 218 (170) mA/mm, a gate-voltage swing of 1.215 (1.15) V, a cutoff frequency f(T) of 25 (20.6) GHz, and the maximum oscillation frequency f(max) of 28.3 (25.6) GHz at 300 K with gate dimensions of 1.2 x 200 mu m(2).
URI: http://dx.doi.org/10.1109/LED.2006.889047
http://hdl.handle.net/11536/11177
ISSN: 0741-3106
DOI: 10.1109/LED.2006.889047
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 28
Issue: 2
起始頁: 96
結束頁: 99
顯示於類別:期刊論文


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