標題: Fabrication of 0.15-mu m Gamma-shaped gate In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTs using DUV lithography and tilt dry-etching technique
作者: Lien, Yi-Chung
Chen, Szu-Hung
Chang, Edward Yi
Lee, Ching-Ting
Chu, Li-Hsin
Chang, Chia-Yuan
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: deep ultraviolet (DUV) lithography;metamorphic high-electron mobility transistors (MHEMTs);tilt dryetching technique;Gamma-shaped gate
公開日期: 1-二月-2007
摘要: An In0.52Al0.48As/In0.6Ga0.4As metamorphic high-electron mobility transistor (MHEMT) with 0.15-mu m Gamma-shaped gate using deep ultraviolet lithography and tilt dry-etching technique is demonstrated. The developed submicrometer gate technology is simple and of low cost as compared to the conventional E-beam lithography or other hybrid techniques. The gate length is controllable by adjusting the tilt angle during the dry-et ching process. The fabricated 0.15-mu m In0.52Al0.48As/In0.6Ga0.4As MHEMT using this novel technique shows a saturated drain-source current of 680 mA/mm and a transconductance of 728 mS/mm. The f(T) and f(max) of the MHEMT are 130 and 180 GHz, respectively. The developed technique is a promising low-cost alternative to the conventional submicrometer E-beam gate technology used for the fabrication for GaAs MHEMTs and monolithic microwave integrated circuits.
URI: http://dx.doi.org/10.1109/LED.2006.889049
http://hdl.handle.net/11536/11176
ISSN: 0741-3106
DOI: 10.1109/LED.2006.889049
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 28
Issue: 2
起始頁: 93
結束頁: 95
顯示於類別:期刊論文


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