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dc.contributor.authorChu, L. H.en_US
dc.contributor.authorChang, E. Y.en_US
dc.contributor.authorChang, L.en_US
dc.contributor.authorWu, Y. H.en_US
dc.contributor.authorChen, S. H.en_US
dc.contributor.authorHsu, H. T.en_US
dc.contributor.authorLee, T. L.en_US
dc.contributor.authorLien, Y. C.en_US
dc.contributor.authorChang, C. Y.en_US
dc.date.accessioned2014-12-08T15:14:48Z-
dc.date.available2014-12-08T15:14:48Z-
dc.date.issued2007-02-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2006.889238en_US
dc.identifier.urihttp://hdl.handle.net/11536/11175-
dc.description.abstractAn enhancement-mode InGaP/AlGaAs/InGaAs pseudomorphic high-electron mobility transistor using platinum (Pt) as the Schottky contact metal was investigated for the first time. Following the Pt/Ti/Pt/Au gate metal deposition, the devices were thermally annealed at 325 degrees C for gate sinking. After the annealing, the device showed a positive threshold voltage (V-th) shift from 0.17 to 0.41 V and a very low drain leakage current from 1.56 to 0.16 mu A/mm. These improvements are attributed to the Schottky barrier height increase and the decrease of the gate-to-channel distance as Pt sinks into the InGaP Schottky layer during gate-sinking process. The shift in the V-th was very uniform across a 4-in wafer and was reproducible from wafer to wafer. The device also showed excellent RF power performance after the gate-sinking process.en_US
dc.language.isoen_USen_US
dc.subjectburied gateen_US
dc.subjectenhancement-mode (E-mode)en_US
dc.subjectInGaPen_US
dc.subjectplatinum (Pt)en_US
dc.subjectpseudomorphic high-electron. mobility transistor (PHEMT)en_US
dc.subjectsingle voltage supplyen_US
dc.titleEffect of gate sinking on the device performance, of the InGaP/AlGaAs/InGaAs enhancement-mode PHEMTen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2006.889238en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume28en_US
dc.citation.issue2en_US
dc.citation.spage82en_US
dc.citation.epage85en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000243915100001-
dc.citation.woscount12-
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