|標題:||Effect of gate sinking on the device performance, of the InGaP/AlGaAs/InGaAs enhancement-mode PHEMT|
|作者:||Chu, L. H.|
Chang, E. Y.
Wu, Y. H.
Chen, S. H.
Hsu, H. T.
Lee, T. L.
Lien, Y. C.
Chang, C. Y.
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
|關鍵字:||buried gate;enhancement-mode (E-mode);InGaP;platinum (Pt);pseudomorphic high-electron. mobility transistor (PHEMT);single voltage supply|
|摘要:||An enhancement-mode InGaP/AlGaAs/InGaAs pseudomorphic high-electron mobility transistor using platinum (Pt) as the Schottky contact metal was investigated for the first time. Following the Pt/Ti/Pt/Au gate metal deposition, the devices were thermally annealed at 325 degrees C for gate sinking. After the annealing, the device showed a positive threshold voltage (V-th) shift from 0.17 to 0.41 V and a very low drain leakage current from 1.56 to 0.16 mu A/mm. These improvements are attributed to the Schottky barrier height increase and the decrease of the gate-to-channel distance as Pt sinks into the InGaP Schottky layer during gate-sinking process. The shift in the V-th was very uniform across a 4-in wafer and was reproducible from wafer to wafer. The device also showed excellent RF power performance after the gate-sinking process.|
|期刊:||IEEE ELECTRON DEVICE LETTERS|
|Appears in Collections:||Articles|
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