標題: Effect of gate sinking on the device performance, of the InGaP/AlGaAs/InGaAs enhancement-mode PHEMT
作者: Chu, L. H.
Chang, E. Y.
Chang, L.
Wu, Y. H.
Chen, S. H.
Hsu, H. T.
Lee, T. L.
Lien, Y. C.
Chang, C. Y.
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: buried gate;enhancement-mode (E-mode);InGaP;platinum (Pt);pseudomorphic high-electron. mobility transistor (PHEMT);single voltage supply
公開日期: 1-Feb-2007
摘要: An enhancement-mode InGaP/AlGaAs/InGaAs pseudomorphic high-electron mobility transistor using platinum (Pt) as the Schottky contact metal was investigated for the first time. Following the Pt/Ti/Pt/Au gate metal deposition, the devices were thermally annealed at 325 degrees C for gate sinking. After the annealing, the device showed a positive threshold voltage (V-th) shift from 0.17 to 0.41 V and a very low drain leakage current from 1.56 to 0.16 mu A/mm. These improvements are attributed to the Schottky barrier height increase and the decrease of the gate-to-channel distance as Pt sinks into the InGaP Schottky layer during gate-sinking process. The shift in the V-th was very uniform across a 4-in wafer and was reproducible from wafer to wafer. The device also showed excellent RF power performance after the gate-sinking process.
URI: http://dx.doi.org/10.1109/LED.2006.889238
http://hdl.handle.net/11536/11175
ISSN: 0741-3106
DOI: 10.1109/LED.2006.889238
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 28
Issue: 2
起始頁: 82
結束頁: 85
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