標題: Simulation and analysis of metamorphic high electron mobility transistors
作者: Lin, Jia-Chuan
Yang, Po-Yu
Tsai, Wei-Chih
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: high electron mobility transistor;metamorphic high electron mobility transistor;pseudo morphic high electron mobility transistor;delta-doping;MEDICI
公開日期: 1-Feb-2007
摘要: In this paper, the metamorphic high electron mobility transistors (mHEMTs) are investigated numerically and compared with pseudomorphic high electron mobility transistors (pHEMTs). The two-dimensional device simulator, MEDICI, is used to solve the Poisson's equation and the electron/hole current continuity equations. The influences of delta-doping concentration and position, gate width, spacer thickness, etc. on the performances of HEMTs are explored. It shows clearly that mHEMTs have higher transconductances, drain currents and DC voltage swings than pHEMTs. (c) 2006 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mejo.2006.11.004
http://hdl.handle.net/11536/11166
ISSN: 0026-2692
DOI: 10.1016/j.mejo.2006.11.004
期刊: MICROELECTRONICS JOURNAL
Volume: 38
Issue: 2
起始頁: 251
結束頁: 254
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