Title: 5.2 Ghz high isolation sige BICMOS CMFB Gilbert mixer
Authors: Meng, Chinchun
Wu, Tzung-Han
Wu, Tse-Hung
Huang, Guo-Wei
電信工程研究所
Institute of Communications Engineering
Keywords: SiGeBiCMOS;deep trench isolation;Gilbert mixer;CMFB
Issue Date: 1-Feb-2007
Abstract: Active PMOS loads with common mode feedback to stabilize the bias points are employed in the Gilbert mixer loads to increase the mixer gain. Good device matching and the deep trench isolation technique in the SiGe HBT technology can improve the port-to-port isolations. A 16 dB conversion gain, Ip(ldB) = -21 dBm and IIP3 = - 11 dBm using 0.35 mu m SiGe BiCMOS Gilbert downconversion micromixer is demonstrated when RF = 5.2 GHz and LO = 5.17 GHz with -66 dB LO-IF, -52 dB LO-RF, and -24 dB RF-IF isolations. (c) 2006 Wiley Periodicals, Inc.
URI: http://dx.doi.org/10.1002/mop.22152
http://hdl.handle.net/11536/11160
ISSN: 0895-2477
DOI: 10.1002/mop.22152
Journal: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
Volume: 49
Issue: 2
Begin Page: 450
End Page: 451
Appears in Collections:Articles


Files in This Item:

  1. 000243297000057.pdf