Title: Schottky contact and the thermal stability of Ni on n-type GaN
Authors: Guo, JD
Pan, FM
Feng, MS
Guo, RJ
Chou, PF
Chang, CY
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
Issue Date: 1-Aug-1996
Abstract: The Schottky barrier height of Ni on n-GaN has been measured to be 0.56 and 0.66 eV by capacitance-voltage (C-V) and current-density-temperature (J-T) methods, respectively. Gallium nickel (Ga4Ni3) is formed as Ni is deposited on the GaN film, which affects the barrier height markedly. The thermal stability of Ni on GaN is also investigated by annealing these specimens at various temperatures. Specimen annealing at temperatures above 200 degrees C leads to the formation of nickel nitrides Ni3N and Ni4N at the interface of Ni and GaN. These interfacial compounds change the measured barrier height to 1.0 and 0.8 eV by C-V and J-T methods, respectively. Comparisons of Schottky characteristics of Ni with those of Pt, Pd, Au, and Ti are also discussed. (C) 1996 American Institute of Physics.
URI: http://hdl.handle.net/11536/1115
ISSN: 0021-8979
Volume: 80
Issue: 3
Begin Page: 1623
End Page: 1627
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