標題: Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1-x metamorphic buffer layer for the growth of Ge layer on Si substrate
作者: Hsieh, Y. C.
Chang, E. Y.
Luo, G. L.
Pilkuhn, M. H.
Tang, S. S.
Chang, C. Y.
Yang, J. Y.
Chung, H. W.
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 19-Feb-2007
摘要: Si+ pre-ion-implantation combined with a GexSi1-x metamorphic buffer structure for the growth of Ge layer on Si substrate is proposed. Enhanced strain relaxation of the GexSi1-x metamorphic buffer layer on Si substrate was achieved due to the introduction of the point defects by heavy dose Si+ pre-ion-implantation. Because of the strain relaxation enhancement and the interface blocking of the dislocations in the GexSi1-x metamorphic buffer structure, the total thickness of the buffer layers was only 0.45 mu m. No cross-hatch pattern was observed on the Ge surface and the dislocation density for the top Ge film was only 7.6x10(6) cm(-2). (c) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2475361
http://hdl.handle.net/11536/11116
ISSN: 0003-6951
DOI: 10.1063/1.2475361
期刊: APPLIED PHYSICS LETTERS
Volume: 90
Issue: 8
結束頁: 
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