標題: Spatially and temporally resolving the degradation of n-channel poly-Si thin-film transistors under hot-carrier stressing
作者: Lee, Ming-Hsien
Chang, Kai-Hsiang
Lin, Horng-Chih
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Mar-2007
摘要: A test structure was proposed to investigate the spatial and temporal evolution of hot-carrier degradation in n-channel poly-Si thin-film transistors. Our experimental results clearly show that the initial damage during the early stage of hot-carrier stressing, which is still undetectable by conventional test structures, can be easily observed by the structure. In addition, the proposed test structure is also capable of resolving the evolution of the degradation along the channel, thus providing a powerful tool to study the location-dependent damage mechanisms. (c) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2710302
http://hdl.handle.net/11536/11106
ISSN: 0021-8979
DOI: 10.1063/1.2710302
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 101
Issue: 5
結束頁: 
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