標題: Improved performance of F-ions-implanted poly-Si thin-film transistors using solid phase crystallization and excimer laser crystallization
作者: Tu, Chun-Hao
Chang, Ting-Chang
Liu, Po-Tsun
Yang, Che-Yu
Feng, Li-Wei
Tsai, Chia-Chou
Chang, Li-Ting
Wu, Yung-Chun
Sze, Simon M.
Chang, Chun-Yen
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
關鍵字: excimer laser crystallization (ELC);F-ions implant;polycrystalline silicon thin-film transistors (poly-Si TFTs);SPC
公開日期: 1-Mar-2007
摘要: Polycrystalline silicon thin-film transistors (Poly-Si TFTs) with F-ions-implantation were investigated in this study. The electrical characteristics and reliability of the F-ions-implanted poly-Si TFTs were reported for solid phase crystallization (SPC) and excimer laser crystallization (ELC) methods respectively. The thermal annealing causes F-ions to pile up at the poly-Si interface, without the initial pad oxide deposition. With the introduction of fluorine in poly-Si film, the trap state density was effectively reduced. Also, the presence of strong Si-F bonds enhances electrical endurance against hot carrier impact by using F-ions-implantation. These improvements in electrical characteristics are even obvious for the ELC poly-Si TFTs compared to the SPC ones.
URI: http://dx.doi.org/10.1109/JDT.2006.890707
http://hdl.handle.net/11536/11105
ISSN: 1551-319X
DOI: 10.1109/JDT.2006.890707
期刊: JOURNAL OF DISPLAY TECHNOLOGY
Volume: 3
Issue: 1
起始頁: 45
結束頁: 51
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