標題: Impacts of SiN-capping layer on the device characteristics and hot-carrier degradation of nMOSFETs
作者: Lu, Chia-Yu
Lin, Horng-Chih
Lee, Yao-Jen
Shie, Yu-Lin
Chao, Chih-Cheng
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: hot-electron effect;low-pressure chemical vapor deposition (LPCVD);nMOSFET;silicon nitride (SiN) capping;tensile strain
公開日期: 1-Mar-2007
摘要: Im pacts of silicon nitride (SiN)-capping layer and the associated deposition process on the device characteristics and hot-electron degradation of nMOSFETs are investigated in this paper. The SiN layer used to induce channel strain for mobility enhancement was deposited by a low-pressure chemical vapor deposition. The deposition of the SiN aggravates threshold-voltage roll-off due to additional thermal budget and the strain effect. It is also found that the device hot-electron degradation is worse with the addition of the SiN capping. Furthermore, our results indicate that both the bandgap narrowing caused by the channel strain and the abundant hydrogen species from the precursors of SiN deposition contribute to the aggravated hot-electron effect.
URI: http://dx.doi.org/10.1109/TDMR.2006.889268
http://hdl.handle.net/11536/11100
ISSN: 1530-4388
DOI: 10.1109/TDMR.2006.889268
期刊: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Volume: 7
Issue: 1
起始頁: 175
結束頁: 180
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