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dc.contributor.authorWu, Woei-Cherngen_US
dc.contributor.authorChao, Tien-Shengen_US
dc.contributor.authorPeng, Wu-Chinen_US
dc.contributor.authorYang, Wen-Luhen_US
dc.contributor.authorWang, Jer-Chyien_US
dc.contributor.authorChen, Jian-Haoen_US
dc.contributor.authorLai, Chao-Sungen_US
dc.contributor.authorYang, Tsung-Yuen_US
dc.contributor.authorLee, Chien-Hsingen_US
dc.contributor.authorHsieh, Tsung-Minen_US
dc.contributor.authorLiou, Jhyy Chengen_US
dc.date.accessioned2014-12-08T15:14:34Z-
dc.date.available2014-12-08T15:14:34Z-
dc.date.issued2007-03-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2007.891301en_US
dc.identifier.urihttp://hdl.handle.net/11536/11073-
dc.description.abstractIn this letter, high-performance and reliable wrapped select gate (WSG) polysilicon-oxide-nitride-oxide-silicon (SONOS) memory cells with multilevel and 2-bit/cell operation have been successfully demonstrated. The multilevel storage is easily obtained with fast program/erase speed (10 mu s/5 ms) and low programming current (3.5 mu A) for our WSG SONOS by a source-side injection. Besides the excellent reliability properties of our multilevel WSG-SONOS memory including unconsidered gate and drain disturbance, long charge retention (> 150 degrees C) and good endurance (> 10(4)) are also presented. This novel WSG-SONOS memory with a multilevel and 2-bit/cell operation can be used in future high-density and high-performance memory application.en_US
dc.language.isoen_USen_US
dc.subjectmultilevel operationen_US
dc.subjectsource-side injectionen_US
dc.subjectwrapped select gate (WSG) polysilicon-oxide-nitride-oxide-siliconen_US
dc.subject(SONOS)en_US
dc.titleHighly reliable multilevel and 2-bit/cell operation of wrapped select gate (WSG) SONOS memoryen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2007.891301en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume28en_US
dc.citation.issue3en_US
dc.citation.spage214en_US
dc.citation.epage216en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000245184700009-
dc.citation.woscount13-
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