標題: Endurance study of switching characteristics in NiO films
作者: Lee, M. D.
Lo, C. K.
Peng, T. Y.
Chen, S. Y.
Yao, Y. D.
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: nickel oxide;RRAM;Bi-stable memory switching effect
公開日期: 1-Mar-2007
摘要: Bi-stable switching effect has been studied in nickel oxide. lms with three different thicknesses. The best sample of our experiments was 150-nm NiO film. Its resistance ratio between high and low states was 3.6 in endurance measurement. The maximum resistance ratio in I-V curve could reach two orders of magnitude, and it could endure over 200 times of reverse processes with the ratio remaining about 1.46. This indicates that the nickel oxide has potential to be a promising material on resistance random access memory. (C) 2006 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jmmm.2006.11.075
http://hdl.handle.net/11536/11069
ISSN: 0304-8853
DOI: 10.1016/j.jmmm.2006.11.075
期刊: JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
Volume: 310
Issue: 2
起始頁: E1030
結束頁: E1031
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