標題: Low-temperature polycrystalline silicon thin-film flash memory with hafnium silicate
作者: Lin, Yu-Hsien
Chien, Chao-Hsin
Chou, Tung-Huan
Chao, Tien-Sheng
Lei, Tan-Fu
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: flash memory;hafnium silicate;nonvolatile memories;polycrystalline silicon thin-film transistor (poly-Si-TFT)
公開日期: 1-三月-2007
摘要: In this paper, we have successfully fabricated poly-Si-oxide-nitride-oxide-silicon (SONOS)-type poly-Si-thin-film transistor (TFT) memories employing hafnium silicate as the trapping layer with low-thermal budget processing (<= 600 degrees C). It was demonstrated that the fabricated memories exhibited good performance in terms of relatively large memory window, high program/erase speed (1 ms/10 ms), long retention time (> 10(6) s for 20% charge loss), and 2-bit operation. Interestingly, we found that these memories depicted very unique disturbance behaviors, which are obviously distinct from those observed in the conventional SONOS-type Flash memories. We thought these specific characteristics are closely related to the presence of the inherent defects along the grain boundaries. Therefore, the elimination of the traps along the grain boundaries in the channel is an important factor for achieving high performance of the SONOS-type poly-Si-TFT Flash memory.
URI: http://dx.doi.org/10.1109/TED.2006.890379
http://hdl.handle.net/11536/11049
ISSN: 0018-9383
DOI: 10.1109/TED.2006.890379
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 54
Issue: 3
起始頁: 531
結束頁: 536
顯示於類別:期刊論文


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  1. 000244669300021.pdf