標題: High-performance poly-Si nanowire NMOS transistors
作者: Lin, Horng-Chih
Su, Chun-Jung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: field-effect transistor;metal-induced lateral crystallization (MILC);mobility;rapid thermal annealing (RTA);Si nanowire
公開日期: 1-Mar-2007
摘要: A novel field-effect transistor with Si nanowire (NW) channels is developed and characterized. To enhance the film crystallinity, metal-induced lateral crystallization (MILC) and/or rapid thermal annealing (RTA) techniques are adopted in the fabrication. In the implementation of MILC process, it is shown that the arrangement of seeding window plays an important role in affecting the resulting film structure. In this regard, asymmetric window arrangement, i.e., with the window locating on only one of the two channel sides is preferred. When MILC and RTA techniques are combined, it is found that single-crystal-like NWs are achieved, leading to significant performance improvement as compared with the control with channels made up of fine-grain structures by the conventional solid-phase, crystallized (SPC) approach. Field-effect mobility up to 550 cm(2)/V-s is recorded in this study.
URI: http://dx.doi.org/10.1109/TNANO.2007.891828
http://hdl.handle.net/11536/11043
ISSN: 1536-125X
DOI: 10.1109/TNANO.2007.891828
期刊: IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume: 6
Issue: 2
起始頁: 206
結束頁: 212
Appears in Collections:Articles