標題: Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels
作者: Chen, Shih-Ching
Chang, Ting-Chang
Liu, Po-Tsun
Wu, Yung-Chun
Yeh, Ping-Hung
Weng, Chi-Feng
Sze, S. M.
Chang, Chun-Yen
Lien, Chen-Hsin
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
公開日期: 19-三月-2007
摘要: In this work, the authors study a polycrystalline silicon thin-film transistor (poly-Si TFT) with oxide/nitride/oxide (ONO) stack gate dielectrics and multiple nanowire channels for the applications of both nonvolatile silicon-oxide-nitride-oxide-silicon (SONOS) memory and switch transistor. The proposed device named as nanowire SONOS-TFT has superior electrical characteristics of a transistor such as on/off current ratio, threshold voltage (V-th), and subthreshold slope due to the good gate control ability originated from fringing electrical field effects. Moreover, the proposed device under adequate operation scheme can exhibit high program/erase efficiency and good retention time characteristics at high temperature. (c) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2715443
http://hdl.handle.net/11536/11015
ISSN: 0003-6951
DOI: 10.1063/1.2715443
期刊: APPLIED PHYSICS LETTERS
Volume: 90
Issue: 12
結束頁: 
顯示於類別:期刊論文


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