|標題:||Nano-roughening n-side surface of AlGaInP-based LEDs for increasing extraction efficiency|
|作者:||Lee, Y. J.|
Lu, T. C.
Kuo, H. C.
Wang, S. C.
Hsu, T. C.
Hsieh, M. H.
Jou, M. J.
Lee, B. J.
Department of Photonics
|關鍵字:||chemical wet etching;AlGaInP-based LEDs;nano-roughening|
|摘要:||A chemical wet etching technique is presented to form a nano-roughened surface with triangle-like morphology on n-side-up AlGaInP-based LEDs fabricated by adopting adhesive layer bonding scheme. A simple and commonly used H3PO4-based solution was applied for chemical wet etching. The morphology of nano-roughened surfaces is analyzed by the atomic force microscope (AFM) and significantly related to the enhancement factor of the LED output power. The output power shows 80% increase after optimizing the nano-roughened morphology of n-side surface, as compared to the ordinary flat surface LED. (c) 2006 Elsevier B.V. All rights reserved.|
|期刊:||MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY|
|Appears in Collections:||Articles|
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