標題: Field enhancement of omega-shaped-gated poly-Si TFT SONOS memory fabricated by a simple sidewall spacer formation
作者: Wu, Chun-Yu
Liao, Ta-Chuan
Yu, Ming-H
Chen, Sheng-Kai
Tsai, Chung-Min
Cheng, Huang-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-五月-2010
摘要: A novel omega-shaped-gated (Omega-Gate) poly-Si thin-film-transistor (TFT) silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory devices fabricated with a simple process have been proposed for the first time. The Omega-Gate structure inherently covered two sharp corners manufactured simply via a side-wall spacer formation. Due to the sharp corner geometry, the local electric fields across the tunneling oxide could be enhanced effectively, thus improving the memory performance. Based on this field enhanced scheme, the Omega-Gate TFT SONOS revealed excellent program/erase (P/E) efficiency and larger memory window as compared to the conventional planar (CP) counterparts. In addition, owing to the better gate controllability, the Omega-Gate TFT SONOS also exhibited superior transistor performance with a much higher on-current, smaller threshold voltage, and steeper subthreshold swing. Therefore, such an Omega-Gate TFT SONOS memory is very promising for the embedded flash on the system-on-panel applications. (C) 2010 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.microrel.2010.01.016
http://hdl.handle.net/11536/11010
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2010.01.016
期刊: MICROELECTRONICS RELIABILITY
Volume: 50
Issue: 5
起始頁: 704
結束頁: 708
顯示於類別:會議論文


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