Title: High-temperature stable HfLaON p-MOSFETs with high-work-function Ir3Si gate
Authors: Wu, C. H.
Hung, B. F.
Chin, Albert
Wang, S. J.
Wang, X. P.
Li, M. -F.
Zhu, C.
Yen, F. Y.
Hou, Y. T.
Jin, Y.
Tao, H. J.
Chen, S. C.
Liang, M. S.
Department of Electronics Engineering and Institute of Electronics
Keywords: HfLaON;Ir3Si;MOSFET;work function
Issue Date: 1-Apr-2007
Abstract: We report a novel 1000 degrees C stable HfLaON p-MOSFET with Ir3Si gate. Low leakage current of 1.8 x 10(-5) A/cm(2) at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm(2)/V center dot s are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate-first p-MOSFET process with self-aligned ion implant and 1000 degrees C rapid thermal annealing is fully compatible to current very large scale integration fabrication lines.
URI: http://dx.doi.org/10.1109/LED.2007.892367
ISSN: 0741-3106
DOI: 10.1109/LED.2007.892367
Volume: 28
Issue: 4
Begin Page: 292
End Page: 294
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