標題: Mechanism of microstructure evolution for the Cu/Ta/GaAs structure after thermal annealing
作者: Chang, Chun-Wei
Lee, Huang-Ming
Chen, Chang-You
Chang, Li
Chang, Edward Y.
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: diffusion;Cu/Ta;annealing;interfacial instability
公開日期: 1-四月-2007
摘要: The diffusion behavior and microstructure evolution of Cu/Ta/GaAs multilayers after thermal annealing are investigated and the mechanism is proposed. A thin 30 nm tantalum layer was sputtered as a diffusion barrier to block Ga and As diffusion into the Cu layer. From the results of sheet resistance measurement, X-ray diffraction analysis, Auger electron spectroscopy and transmission electron microscopy, the Cu/Ta films on GaAs were found to be very stable up to 500 degrees C without Cu migration into GaAs. After annealing al 550 degrees C, the interfacial mixing of Ta with GaAs substrate occurred, resulting in the formation of TaAs2, and the diffusion of Ga through the Ta layer formed the Cu3Ga phase at the Cu/Ta interface. After annealing at 600 degrees C, the reaction of GaAs with Ta and Cu formed TaAs and Cu3Ga owing to Ga migration and interfacial instability.
URI: http://dx.doi.org/10.1143/JJAP.46.1409
http://hdl.handle.net/11536/10958
ISSN: 0021-4922
DOI: 10.1143/JJAP.46.1409
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 46
Issue: 4A
起始頁: 1409
結束頁: 1414
顯示於類別:期刊論文


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