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dc.contributor.authorHsiao, Hsiang-Yaoen_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2014-12-08T15:14:17Z-
dc.date.available2014-12-08T15:14:17Z-
dc.date.issued2007-04-09en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2721136en_US
dc.identifier.urihttp://hdl.handle.net/11536/10920-
dc.description.abstractThermomigration in flip-chip solder joints is investigated using alternating currents and infrared microscopy to decouple it from electromigration effect. It is found that the thermal gradient in solder bump can be as high as 2143 degrees C/cm when 9.2x10(4) A/cm(2) was applied at 100 degrees C. Markers fabricated by focus ion beam are employed to measure the thermomigration rate. The thermomigration flux is measured to be 3.3x10(13) at./cm(2). With the known thermal gradient, the molar heat of 26.8 kJ/mole has been obtained for the transport of Pb. (c) 2007 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleThermomigration in flip-chip SnPb solder joints under alternating current stressingen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2721136en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume90en_US
dc.citation.issue15en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000245690700055-
dc.citation.woscount31-
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