標題: High-speed GaAs metal gate semiconductor field effect transistor structure grown on a composite Ge/Ge(x)Si(1-x)/Si substrate
作者: Luo, Guang-Li
Hsieh, Yen-Chang
Chang, Edward Yi
Pilkuhn, M. H.
Chien, Chao-Hsin
Yang, Tsung-Hsi
Cheng, Chao-Ching
Chang, Chun-Yen
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 15-Apr-2007
摘要: In this study we used a low-pressure metal organic vapor phase epitaxy method to investigate the growth of GaAs metal gate semiconductor field effect transistor (MESFET) structures on a Si substrate. The buffer layer between the Si substrate and the grown GaAs epitaxial layers was a composite Ge/Si(0.05)Ge(0.95)/Si(0.1)Ge(0.9) metamorphic layer. We used transmission electron microscopy to observe the microstructures formed in the grown GaAs/Ge/Si(x)Ge(1-x)/Si material and atomic force microscopy to analyze the surface morphology and the formation of antiphase domains in the GaAs epitaxial layers. The measured Hall electron mobility in the channel layer of a MESFET structure grown on a 6 degrees misoriented Si substrate was 2015 cm(2) V(-1) s(-1) with a carrier concentration of 5.0x10(17) cm(-3). The MESFET device fabricated on this sample exhibited good current-voltage characteristics.
URI: http://dx.doi.org/10.1063/1.2722245
http://hdl.handle.net/11536/10912
ISSN: 0021-8979
DOI: 10.1063/1.2722245
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 101
Issue: 8
結束頁: 
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