標題: Optical properties of InGaN quantum dots grown by SiN(x) nanomasks
作者: Huang, L. L.
Chang, H. J.
Chou, Y. Y.
Wang, C. H.
Chen, T. T.
Chen, Y. F.
Tsai, J. Y.
Wang, S. C.
Kuo, H. C.
光電工程學系
Department of Photonics
公開日期: 15-Apr-2007
摘要: InGaN quantum dots (QDs) deposited on SiN(x) nanomasks have been investigated by atomic force microscopy, photoluminescence (PL), and photoluminescence excitation (PLE) measurements. It was found that the size of QDs can be well controlled by SiN(x) nanomasks, enabling the manipulation of quantum confinement effect. The PL spectra of InGaN QDs contain several fine structures, and the main peaks can be attributed to families of QDs with different sizes. The emission arising from InGaN QDs and GaN buffer layer can be clearly distinguished based on PLE measurement, which can be used to improve the interpretation in the previous reports. Our study indicates that the quantum confined Stark effect due to piezoelectric field plays a very important role in the optical properties of InGaN QDs, which is very useful for the application of optoelectronic devices.(c) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2717258
http://hdl.handle.net/11536/10910
ISSN: 0021-8979
DOI: 10.1063/1.2717258
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 101
Issue: 8
結束頁: 
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