標題: Nanogap formation by palladium hydrogenation for surface conduction electron emitters fabrication
作者: Tsai, Chih-Hao
Pan, Fu-Ming
Chen, Kuan-Jung
Wei, Cheng-Yang
Liu, Mei
Mo, Chi-Neng
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 16-四月-2007
摘要: Nanometer-scale gaps in Pd strips are obtained by hydrogen absorption under high pressure treatment. The resulting lattice constant increase due to the Pd phase transformation after hydrogen uptake results in a large compressive stress on the thin Pd films. Under proper geometric arrangement of the Pd electrode within a surface conduction electron (SCE) emitter structure, a single nanogap per SCE device is obtained. A turn-on voltage of 41 V is observed for emitters with a 25 nm gap. (c) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2728761
http://hdl.handle.net/11536/10898
ISSN: 0003-6951
DOI: 10.1063/1.2728761
期刊: APPLIED PHYSICS LETTERS
Volume: 90
Issue: 16
結束頁: 
顯示於類別:期刊論文