標題: Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes
作者: Lee, Y. J.
Lin, P. C.
Lu, T. C.
Kuo, H. C.
Wang, S. C.
光電工程學系
Department of Photonics
公開日期: 16-Apr-2007
摘要: An InGaN-based dual-wavelength blue/green (470 nm/550 nm) light emitting diode (LED) with three terminal operations has been designed and fabricated by using sapphire laser lift-off and wafer-bonding schemes. The device is equivalent to a parallel connection of blue and green LEDs; thus the effective electrical resistance of the device could be reduced. The luminous efficiency is 40 lm/W at 20 mA, accompanied by a broad electroluminescence emission with a combination of blue and green colors. This monolithically integrated dichromatic lighting structure has great potential in the application of the solid-state lighting. (c) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2722672
http://hdl.handle.net/11536/10894
ISSN: 0003-6951
DOI: 10.1063/1.2722672
期刊: APPLIED PHYSICS LETTERS
Volume: 90
Issue: 16
結束頁: 
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